STRESS DEPENDENCE OF THE BINDING-ENERGY OF D- CENTERS IN SI

被引:30
作者
LARSEN, DM
机构
来源
PHYSICAL REVIEW B | 1981年 / 23卷 / 10期
关键词
D O I
10.1103/PhysRevB.23.5521
中图分类号
T [工业技术];
学科分类号
08 ;
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页码:5521 / 5526
页数:6
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共 9 条
[2]   EXCITATION SPECTRA OF LITHIUM DONORS IN SILICON AND GERMANIUM [J].
AGGARWAL, RL ;
FISHER, P ;
MOURZINE, V ;
RAMDAS, AK .
PHYSICAL REVIEW, 1965, 138 (3A) :A882-&
[3]  
BETHE HA, 1957, HDB PHYSIK, V35
[4]   HYPERFINE SPLITTING OF DONOR STATES IN SILICON [J].
KOHN, W ;
LUTTINGER, JM .
PHYSICAL REVIEW, 1955, 97 (04) :883-888
[5]  
Larsen D. M., 1981, Physics in High Magnetic Fields. Proceedings of the Oji International Seminar, P120
[6]  
NARITA S, 1980, J PHYS SOC JPN SA, V49, P197
[7]  
NATORI A, 1977, J PHYS SOC JPN, V43, P1274
[8]   D-STATE IN SILICON [J].
TANIGUCHI, M ;
NARITA, S .
SOLID STATE COMMUNICATIONS, 1976, 20 (02) :131-133
[9]   D- STATES IN GERMANIUM [J].
TANIGUCHI, M ;
NARITA, SI .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (04) :1262-1269