ELECTRICAL-PROPERTIES OF SN-DOPED IN2O3 FILMS PREPARED BY REACTIVE EVAPORATION

被引：16
作者：
NOGUCHI, S
SAKATA, H
机构：
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 1981年 / 14卷 / 08期
关键词：
D O I：
10.1088/0022-3727/14/8/019
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1523 / +
页数：1
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