PHOTOELECTRIC EFFECT IN A SILICON P-N-JUNCTION IN THE CASE OF INTRABAND OPTICAL HEATING OF CARRIERS

被引：0

作者：

ANDRIANOV, AV

VALOV, PM

SUKHANOV, VL

TUCHKEVICH, VV

SHMIDT, NM

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1980年 / 14卷 / 05期

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D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：507 / 510

页数：4

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[1] THERO-PHOTOELECTRIC EFFECTS IN A P-N-JUNCTION WITH HOT CARRIERS
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