HIGH-CONDUCTIVITY HETERO-EPITAXIAL ZNSE FILMS

被引：27

作者：

BESOMI, P

WESSELS, BW

机构：

来源：

APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 10期

关键词：

D O I：

10.1063/1.91774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：955 / 957

页数：3

共 12 条

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BESOMI, P ;

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[4]

FRANZOSI D, 1980, APPL PHYS, V21, P83

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FITZPATRICK, BJ ;

GRIMMEISS, HG ;

BHARGAVA, RN ;

NEUMARK, GF .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :194-196

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LILLEY, P .

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NASSAU, K ;

KUKIMOTO, H .

PHYSICAL REVIEW B, 1972, 6 (02) :545-&

[8] P-N-JUNCTION ZINC SULFO-SELENIDE AND ZINC SELENIDE LIGHT-EMITTING DIODES [J].

ROBINSON, RJ ;

KUN, ZK .

APPLIED PHYSICS LETTERS, 1975, 27 (02) :74-76

[9] BARRIER HEIGHTS AND CONTACT PROPERTIES OF N-TYPE ZNSE CRYSTALS [J].

SWANK, RK ;

AVEN, M ;

DEVINE, JZ .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :89-&

[10] MOLECULAR-BEAM EPITAXIAL-GROWTH OF LOW-RESISTIVITY ZNSE FILMS [J].

YAO, T ;

MAKITA, Y ;

MAEKAWA, S .

APPLIED PHYSICS LETTERS, 1979, 35 (02) :97-98

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