PICOSECOND CAPTURE OF PHOTOEXCITED HOLES BY SHALLOW ACCEPTORS IN P-TYPE GAAS

被引：15
|
作者：
LOHNER, A
WOERNER, M
ELSAESSER, T
KAISER, W
机构：
[1] Physik Department E 11, Technische Universität M̈nchen
来源：
PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 26期
关键词：
D O I：
10.1103/PhysRevLett.68.3920
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
Ultrafast recombination of holes with shallow acceptors in a III-V semiconductor is directly observed for the first time, by means of picosecond infrared spectroscopy. Neutral impurities in p-doped GaAs at low temperature are photoionized by picosecond infrared excitation. The recombination of free holes with negatively charged acceptors-monitored via absorption changes below the band edge-occurs on a time scale of several tens of picoseconds, following a nonexponential kinetics. Emission of longitudinal-optical phonons by the free holes is found to be the dominant mechanism of recombination.
引用
收藏
页码：3920 / 3923
页数：4
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