PICOSECOND CAPTURE OF PHOTOEXCITED HOLES BY SHALLOW ACCEPTORS IN P-TYPE GAAS

被引：15

作者：

LOHNER, A

WOERNER, M

ELSAESSER, T

KAISER, W

机构：

[1] Physik Department E 11, Technische Universität M̈nchen

来源：

PHYSICAL REVIEW LETTERS | 1992年 / 68卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.68.3920

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Ultrafast recombination of holes with shallow acceptors in a III-V semiconductor is directly observed for the first time, by means of picosecond infrared spectroscopy. Neutral impurities in p-doped GaAs at low temperature are photoionized by picosecond infrared excitation. The recombination of free holes with negatively charged acceptors-monitored via absorption changes below the band edge-occurs on a time scale of several tens of picoseconds, following a nonexponential kinetics. Emission of longitudinal-optical phonons by the free holes is found to be the dominant mechanism of recombination.

引用

页码：3920 / 3923

页数：4

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