NUCLEATION STUDIES OF GALLIUM-ARSENIDE ON (III) TUNGSTEN

被引:1
作者
OWEN, SJT
TUCK, B
STEVENSON, GA
机构
关键词
D O I
10.1016/0040-6090(72)90269-6
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:31 / +
页数:1
相关论文
共 50 条
[31]   COULOMETRIC TITRATION OF GALLIUM IN GALLIUM-ARSENIDE [J].
NAKAYAMA, S ;
MIZUSUNA, H ;
HARADA, S .
BUNSEKI KAGAKU, 1990, 39 (05) :307-311
[32]   SOLID-STATE HIGH-RESOLUTION NMR-STUDIES ON GALLIUM-ARSENIDE AND INDIUM GALLIUM-ARSENIDE SEMICONDUCTORS [J].
KUSHIBIKI, N ;
TSUKAMOTO, M ;
ERATA, T .
CHEMICAL PHYSICS LETTERS, 1986, 129 (03) :303-305
[33]   BREAKDOWN STABILITY OF GOLD, ALUMINUM, AND TUNGSTEN SCHOTTKY BARRIERS ON GALLIUM-ARSENIDE [J].
BALIGA, BJ ;
EHLE, R ;
SEARS, A ;
CAMPBELL, P ;
GARWACKI, W ;
KATZ, W .
ELECTRON DEVICE LETTERS, 1982, 3 (07) :177-179
[34]   GALLIUM-ARSENIDE SOLAR-CELLS ON TUNGSTEN-GRAPHITE SUBSTRATES [J].
CHU, SS ;
CHU, TL ;
YANG, HT ;
WANG, CP ;
MONROE, SE .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :C147-C147
[35]   DEEP LEVEL STUDIES OF OXYGEN DOPED GALLIUM-ARSENIDE [J].
NAYAR, S ;
PENCHINA, CM .
BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1981, 26 (03) :256-256
[36]   ARSINE AND GALLIUM-ARSENIDE (GA) - DEVELOPMENTAL TOXICITY STUDIES [J].
MORRISSEY, RE ;
HARRIS, MW ;
HASKINS, E ;
ALLEN, J ;
ROSS, M ;
FOWLER, BA ;
ADKINS, B ;
MOORMAN, MP ;
MOORMAN, CR .
ENVIRONMENTAL HEALTH PERSPECTIVES, 1987, 75 :146-146
[37]   PHOTOVOLTAGE STUDIES OF CLEAN AND OXYGEN COVERED GALLIUM-ARSENIDE [J].
DAHLBERG, SC .
SURFACE SCIENCE, 1976, 59 (01) :83-96
[38]   GALLIUM ALUMINUM ARSENIDE GALLIUM-ARSENIDE INTEGRATED OPTICAL REPEATER [J].
BARCHAIM, N ;
LAU, KY ;
URY, I ;
YARIV, A .
PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1984, 466 :65-68
[39]   DIFFUSION OF CHROMIUM IN GALLIUM-ARSENIDE [J].
DEAL, MD ;
STEVENSON, DA .
JOURNAL OF APPLIED PHYSICS, 1986, 59 (07) :2398-2407
[40]   HALL FACTOR OF GALLIUM-ARSENIDE [J].
BORISOVA, LA ;
KRAVCHENKO, AF ;
KOT, KN ;
SKOK, EM .
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1972, 6 (05) :693-+