IMPURITY STATES IN A QUANTUM-WELL WIRE OF GAAS-GA1-XALXAS

被引：30

作者：

DASILVA, AF

机构：

[1] Universidade Federal da Bahia, Instituto de Física, Campus da FederaçAo, 40210 Salvador, Bahia

来源：

PHYSICAL REVIEW B | 1990年 / 41卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.41.1684

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We investigate the behavior of the hydrogenlike impurity states in a small wire of GaAs inside a Ga1-xAlxAs structure. The effects of disorder are taken into account in the calculation. It is shown that the hopping energy plays an essential role in the formation of the impurity bands and that the peak energy as a function of impurity concentration or wire dimension behaves in the same way for both cases. Results are compared to a recent experiment on cathodoluminescence. © 1990 The American Physical Society.

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页码：1684 / 1686

页数：3

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