GETTERING IN SILICON

被引：204
作者：
KANG, JS [1 ]
SCHRODER, DK [1 ]
机构：
[1] ARIZONA STATE UNIV,CTR SOLID STATE ELECTR RES,TEMPE,AZ 85287
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 08期
关键词：
D O I：
10.1063/1.342714
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2974 / 2985
页数：12
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