PROPERTIES OF TIN OXIDE-FILMS PREPARED BY REACTIVE ELECTRON-BEAM EVAPORATION

被引:53
作者
BANERJEE, R
DAS, D
机构
关键词
D O I
10.1016/0040-6090(87)90392-0
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:291 / 301
页数:11
相关论文
共 16 条
[1]  
AIGA M, 1984, 1ST INT PHOT SCI ENG, P225
[2]   CHARACTERIZATION OF TIN DOPED INDIUM OXIDE-FILMS PREPARED BY ELECTRON-BEAM EVAPORATION [J].
BANERJEE, R ;
DAS, D ;
RAY, S ;
BATABYAL, AK ;
BARUA, AK .
SOLAR ENERGY MATERIALS, 1986, 13 (01) :11-23
[3]   THE EFFECTS OF ANNEALING ON THE STRUCTURE AND COMPOSITION OF ELECTRON-BEAM-EVAPORATED TIN OXIDE-FILMS [J].
CHOUDHURY, NS ;
GOEHNER, RP ;
LEWIS, N ;
GREEN, RW .
THIN SOLID FILMS, 1984, 122 (03) :231-241
[4]   PROPERTIES OF ELECTRON-BEAM-EVAPORATED TIN OXIDE-FILMS [J].
DAS, D ;
BANERJEE, R .
THIN SOLID FILMS, 1987, 147 (03) :321-331
[5]   STRUCTURE, PHOTO-VOLTAIC PROPERTIES, AND ANGLE-OF-INCIDENCE CORRELATIONS OF ELECTRON-BEAM-DEPOSITED SNO2-IN-SI SOLAR-CELLS [J].
FENG, T ;
GHOSH, AK ;
FISHMAN, C .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (12) :8070-8074
[6]   ELECTRICAL-PROPERTIES OF HIGHLY CONDUCTING AND TRANSPARENT THIN-FILMS OF MAGNETRON SPUTTERED SNO2 [J].
GOODCHILD, RG ;
WEBB, JB ;
WILLIAMS, DF .
JOURNAL OF APPLIED PHYSICS, 1985, 57 (06) :2308-2310
[7]  
JARZEBSKI ZM, 1973, OXIDE SEMICONDUCTORS, P255
[8]   DEGRADATION OF ITO FILM IN GLOW-DISCHARGE PLASMA [J].
KUBOI, O .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (11) :L783-L786
[9]  
Mott N. F., 1974, METAL INSULATOR TRAN
[10]   DEFECT STRUCTURE AND ELECTRONIC DONOR LEVELS IN STANNIC OXIDE CRYSTALS [J].
SAMSON, S ;
FONSTAD, CG .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (10) :4618-4621