DYNAMICS OF EXCITON RECOMBINATION IN II-VI SEMICONDUCTOR QUANTUM-WELLS

被引:0
作者
SCHULZGEN, A [1 ]
RUNGE, E [1 ]
HENNEBERGER, F [1 ]
ZIMMERMANN, R [1 ]
机构
[1] MAX PLANCK ARBEITSGRP HALBLEITERTHEORIE,D-10117 BERLIN,GERMANY
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1994年 / 34卷
关键词
QUANTUM WELL; ZNCDSE/ZNSE; ZNSE/ZNMNSE; EXCITON; LOCALIZATION; DISORDER; TIME-RESOLVED PHOTOLUMINESCENCE;
D O I
暂无
中图分类号
O59 [应用物理学];
学科分类号
摘要
We have studied the temporal evolution of the inhomogeneously broadend exciton emission band to obtain information about the process of exciton localization in ZnCdSe/ZnSe and ZnSe/ZnMnSe quantum well structures. The observed behavior can be described with quantitative agreement by theoretical calculations taking into account the exciton center-of-mass motion in a disordered potential being Gauss distributed acid correlated over distances of the exciton Bohr radius. As predicted by the theory a nearly linear increase of the exciton life-time is observed between 5 K and 40 K for the ZnCdSe/ZnSe structure.
引用
收藏
页码:155 / 157
页数:3
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