DIFFUSION OF ION-IMPLANTED PHOSPHORUS IN SILICON

Diffusion of ion-implanted phosphorus in silicon during rapid thermal annealing (RTA) and thermal furnace annealing at various concentrations of radiation defects is investigated using an electrical method. The diffusion of phosphorus in layers previously doped with Ge is also studied. Part of the inserted phosphorus at thermal treatment is established to be captured by the surplus vacancies as the traps determining the displacement of the phosphorus distribution towards the surface. The other part of the impurity in form of P atom-Si atom complexes accelerates the phosphorus diffusion. The temperature independence of the effective coefficient of diffusion of implanted phosphorus in a wide temperature range of RTA is explained by the closeness of the activation energy of diffusion of the complex PI and the activation energy of its annealing.