DUAL IMPLANTATION OF SILICON WITH BORON AND AGRON IONS

被引：2

作者：

POPOK, V

HNATOWICZ, V

KVITEK, J

SVORCIK, V

RYBKA, V

机构：

[1] ACAD SCI CZECH REPUBL, INST NUCL PHYS, CS-25068 PRAGUE, CZECH REPUBLIC

[2] INST CHEM TECHNOL, DEPT SOLID STATE ENGN, CS-16628 PRAGUE, CZECH REPUBLIC

来源：

PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1994年 / 141卷 / 01期

关键词：

D O I：

10.1002/pssa.2211410109

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon wafers are implanted with 40 keV B+ ions (1.2 x 10(14) or 1.2 x 10(15) cm-2) and 50 or 100 keV Ar+ ions (from 1.2 x 10(14) to 1.2 x 10(15) cm-2). After implantation the samples are furnace annealed at temperatures from 100 to 450-degrees-C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.

引用

页码：93 / 98

页数：6

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