DUAL IMPLANTATION OF SILICON WITH BORON AND AGRON IONS

被引：2
|
作者：
POPOK, V
HNATOWICZ, V
KVITEK, J
SVORCIK, V
RYBKA, V
机构：
[1] ACAD SCI CZECH REPUBL, INST NUCL PHYS, CS-25068 PRAGUE, CZECH REPUBLIC
[2] INST CHEM TECHNOL, DEPT SOLID STATE ENGN, CS-16628 PRAGUE, CZECH REPUBLIC
来源：
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1994年 / 141卷 / 01期
关键词：
D O I：
10.1002/pssa.2211410109
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Silicon wafers are implanted with 40 keV B+ ions (1.2 x 10(14) or 1.2 x 10(15) cm-2) and 50 or 100 keV Ar+ ions (from 1.2 x 10(14) to 1.2 x 10(15) cm-2). After implantation the samples are furnace annealed at temperatures from 100 to 450-degrees-C. The depth profiles of the implanted Ar atoms and radiation damages before and after annealing are obtained from random and channeled RBS spectra. The influence of preliminary boron implantation on the distribution of radiation damages created during subsequent argon implantation is studied. It is shown that the annealing behaviour of implanted layers depends on the degree of silicon amorphization.
引用
收藏
页码：93 / 98
页数：6
相关论文
共 50 条
  • [1] Dual arsenic and boron ion implantation in silicon
    1600, American Inst of Physics, Woodbury, NY, USA (75):
  • [2] Recoil implantation of boron into silicon by high energy Silicon ions
    Shao, L
    Lu, XM
    Wang, XM
    Rusakova, I
    Mount, G
    Zhang, LH
    Liu, JR
    Chu, WK
    APPLICATION OF ACCELERATORS IN RESEARCH AND INDUSTRY, 2001, 576 : 900 - 903
  • [3] HIGH-TEMPERATURE IMPLANTATION OF BORON IONS INTO SILICON
    ALEKSANDROV, PA
    BARANOVA, EK
    DEMAKOV, KD
    SUPRUNBELEVICH, YP
    KRICHKEVICH, AG
    RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1991, 116 (03): : 195 - 197
  • [4] DUAL ARSENIC AND BORON ION-IMPLANTATION IN SILICON
    YOKOTA, K
    OKAMOTO, Y
    MIYASHITA, F
    HIRAO, T
    WATANABE, M
    SEKINE, K
    ANDO, Y
    MATSUDA, K
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (11) : 7247 - 7251
  • [5] IMPLANTATION OF BORON IN SILICON
    HOFKER, WK
    PHILIPS RESEARCH REPORTS, 1975, : 1 - 121
  • [6] RADIATION DEFECTS IN SILICON DOPED BY IMPLANTATION OF BORON AND HELIUM-IONS
    KOVALEV, GG
    SOKOLOV, VN
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1984, 18 (06): : 676 - 677
  • [7] IMPLANTATION OF BORON AND PHOSPHORUS IONS INTO SILICON SUBSTRATE AND ITS APPLICATION TO SEMICONDUCTOR DEVICES
    TSUCHIMO.T
    TOKUYAMA, T
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1968, 115 (03) : C70 - &
  • [8] BORON IMPLANTATION INTO SILICON AMORPHIZED BY TIN IMPLANTATION
    DELFINO, M
    MORGAN, AE
    SADANA, DK
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1987, 19-20 : 363 - 368
  • [9] SOME CHARACTERISTICS OF DISTRIBUTION OF RADIATION DEFECTS RESULTING FROM IMPLANTATION OF BORON IONS IN SILICON
    SKAKUN, NA
    DIKII, NP
    MATYASH, PP
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (07): : 854 - 855
  • [10] DECREASE OF RESISTANCE OF ALUMINUM FILM WITH SUBMICRON DEPTH ON SILICON DUE TO IMPLANTATION OF BORON IONS
    BUZANYOVA, YV
    KUZNETSOV, GV
    PROKOFYEV, AY
    SAGAN, ZS
    STRIKHA, VI
    SHUMILO, AA
    IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1987, 30 (07): : 103 - 105
12345