共 50 条
- [1] PULSED ELECTRON-BEAM ANNEALING ION-IMPLANTED MATERIALS - EQUIPMENT AND RESULTS BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (07): : 798 - 798
- [4] PULSED ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SI LAYERS RADIATION EFFECTS LETTERS, 1979, 43 (01): : 31 - 36
- [7] TEM STUDY OF ION-IMPLANTED GAAS AFTER PULSED ELECTRON-BEAM ANNEALING RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1993, 125 (04): : 373 - 380
- [8] CONTINUOUS ELECTRON-BEAM ANNEALING OF ION-IMPLANTED SILICON EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 262 - 264
- [9] MELTING AND FREEZING KINETICS INDUCED BY PULSED ELECTRON-BEAM ANNEALING IN ION-IMPLANTED SILICON JOURNAL DE PHYSIQUE, 1983, 44 (NC-5): : 91 - 95
- [10] PULSED-ELECTRON-BEAM ANNEALING OF ION-IMPLANTED GAAS MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1991, 9 (1-3): : 331 - 335