OBSERVATION OF AN OXYGEN-RELATED MOBILITY-GAP DEFECT IN ION-IMPLANTED HYDROGENATED AMORPHOUS-SILICON FILMS

被引：8

作者：

MICHELSON, CE ^{[1
]}

GELATOS, AV ^{[1
]}

COHEN, JD ^{[1
]}

HARBISON, JP ^{[1
]}

机构：

[1] BELL COMMUN RES INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.35.4141

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4141 / 4144

页数：4

共 12 条

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[2]

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[4]

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[5]

GUHA S, 1984, TETRAHEDRALLY BONDED, P233

[6] MEASUREMENT OF THE DENSITY OF GAP STATES IN HYDROGENATED AMORPHOUS-SILICON BY SPACE-CHARGE SPECTROSCOPY [J].

LANG, DV ;

COHEN, JD ;

HARBISON, JP .

PHYSICAL REVIEW B, 1982, 25 (08) :5285-5320

[7]

LUCOVSKY G, COMMUNICATION

[8]

LUCOVSKY G, 1984, AIP C P, V120, P55

[9] DRIVE-LEVEL CAPACITANCE PROFILING - ITS APPLICATION TO DETERMINING GAP STATE DENSITIES IN HYDROGENATED AMORPHOUS-SILICON FILMS [J].

MICHELSON, CE ;

GELATOS, AV ;

COHEN, JD .

APPLIED PHYSICS LETTERS, 1985, 47 (04) :412-414

[10] DOPING OF AMORPHOUS SILICON BY ALKALI-ION IMPLANTATIONS [J].

SPEAR, WE ;

LECOMBER, PG ;

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MULLER, G .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1979, 39 (02) :159-165

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