ELECTRICAL CHARACTERIZATION OF TI SCHOTTKY BARRIERS ON N-TYPE GAN

被引：103

作者：

BINARI, SC

DIETRICH, HB

KELNER, G

ROWLAND, LB

DOVERSPIKE, K

GASKILL, DK

机构：

[1] Naval Research Laboratory, Washington DC

来源：

ELECTRONICS LETTERS | 1994年 / 30卷 / 11期

关键词：

SEMICONDUCTOR DEVICE CHARACTERIZATION; SCHOTTKY-BARRIER DIODES;

D O I：

10.1049/el:19940565

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The Schottky barrier height of Ti on n-type GaN has been measured to be 0.58 and 0.59eV by capacitance-voltage and current-voltage techniques, respectively. This work is of particular interest because it is the first measure of the Schottky barrier height on GaN for a metal other than Au. The barrier height of Ti on GaN is significantly less than that of Au. This supports the prediction that the Fermi level is not pinned at the GaN surface.

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页码：909 / 911

页数：3

相关论文

共 11 条

[1] INFRARED LATTICE-VIBRATIONS AND FREE-ELECTRON DISPERSION IN GAN [J].

BARKER, AS ;

ILEGEMS, M .

PHYSICAL REVIEW B, 1973, 7 (02) :743-750

[2]

BINARI SC, UNPUB APPL PHYS LETT

[3] APPROXIMATIONS FOR FERMI-DIRAC INTEGRALS, ESPECIALLY THE FUNCTION F1/2(ETA) USED TO DESCRIBE ELECTRON-DENSITY IN A SEMICONDUCTOR [J].

BLAKEMORE, JS .

SOLID-STATE ELECTRONICS, 1982, 25 (11) :1067-1076

[4] METAL CONTACTS TO GALLIUM NITRIDE [J].

FORESI, JS ;

MOUSTAKAS, TD .

APPLIED PHYSICS LETTERS, 1993, 62 (22) :2859-2861

[5] SCHOTTKY-BARRIER ON N-TYPE GAN GROWN BY HYDRIDE VAPOR-PHASE EPITAXY [J].

HACKE, P ;

DETCHPROHM, T ;

HIRAMATSU, K ;

SAWAKI, N .

APPLIED PHYSICS LETTERS, 1993, 63 (19) :2676-2678

[6] HIGH-RESPONSIVITY PHOTOCONDUCTIVE ULTRAVIOLET SENSORS BASED ON INSULATING SINGLE-CRYSTAL GAN EPILAYERS [J].

KHAN, MA ;

KUZNIA, JN ;

OLSON, DT ;

VANHOVE, JM ;

BLASINGAME, M ;

REITZ, LF .

APPLIED PHYSICS LETTERS, 1992, 60 (23) :2917-2919

[7]

KHAN MA, 1993, APPL PHYS LETT, V62, P1786, DOI 10.1063/1.109549

[8] LOW-RESISTANCE OHMIC CONTACTS ON WIDE BAND-GAP GAN [J].

LIN, ME ;

MA, Z ;

HUANG, FY ;

FAN, ZF ;

ALLEN, LH ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1994, 64 (08) :1003-1005

[9]

ROWLAND LB, 1994, IN PRESS P INT C SIL

[10] CHEMICAL TRENDS OF SCHOTTKY BARRIERS - RE-EXAMINATION OF SOME BASIC IDEAS [J].

SCHLUTER, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1374-1376