NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE

被引：96

作者：

CHEUNG, NW ^{[1
]}

CULBERTSON, RJ ^{[1
]}

FELDMAN, LC ^{[1
]}

SILVERMAN, PJ ^{[1
]}

WEST, KW ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 45卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.45.120

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：120 / 124

页数：5

共 16 条

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IWAMI, M .

APPLIED PHYSICS LETTERS, 1977, 31 (09) :611-612

[12] DYNAMICAL OBSERVATION OF ROOM-TEMPERATURE INTERFACIAL REACTION IN METAL-SEMICONDUCTOR SYSTEM BY AUGER-ELECTRON SPECTROSCOPY [J].

HIRAKI, A ;

KIM, S ;

KAMMURA, W ;

IWAMI, M .

SURFACE SCIENCE, 1979, 86 (JUL) :706-710

[13] MANY-BODY EFFECTS AT METAL-SEMICONDUCTOR JUNCTIONS .1. SURFACE PLASMONS AND ELECTRON-ELECTRON SCREENED INTERACTION [J].

INKSON, JC .

JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1972, 5 (18) :2599-&

[14] INTERFACIAL REACTION AND SCHOTTKY-BARRIER IN METAL-SILICON SYSTEMS [J].

OTTAVIANI, G ;

TU, KN ;

MAYER, JW .

PHYSICAL REVIEW LETTERS, 1980, 44 (04) :284-287

[15]

RHODEICK EH, 1978, METAL SEMICONDUCTOR, P176

[16] APPLICATION OF AUGER-ELECTRON SPECTROSCOPY TO STUDIES OF SILICON-SILICIDE INTERFACE [J].

ROTH, JA ;

CROWELL, CR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04) :1317-1324

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