NI ON SI(111) - REACTIVITY AND INTERFACE STRUCTURE

被引：96

作者：

CHEUNG, NW ^{[1
]}

CULBERTSON, RJ ^{[1
]}

FELDMAN, LC ^{[1
]}

SILVERMAN, PJ ^{[1
]}

WEST, KW ^{[1
]}

MAYER, JW ^{[1
]}

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

来源：

PHYSICAL REVIEW LETTERS | 1980年 / 45卷 / 02期

关键词：

D O I：

10.1103/PhysRevLett.45.120

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：120 / 124

页数：5

共 16 条

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[6] USE OF THIN SI CRYSTALS IN BACKSCATTERING-CHANNELING STUDIES OF SI-SIO2 INTERFACE [J].

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[7]

FELDMAN LC, SURFACE SCI RECENT P

[8]

FELDMAN LC, 1978, 1978 P INT C PHYS SI, P339

[9] MICROSCOPIC COMPOUND FORMATION AT THE PD-SI(111) INTERFACE [J].

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[10]

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