HIGH-SPEED, POLYIMIDE-BASED SEMIINSULATING PLANAR BURIED HETEROSTRUCTURES

被引：25

作者：

BOWERS, JE

KOREN, U

MILLER, BI

SOCCOLICH, C

JAN, WY

机构：

[1] AT&T Bell Lab, Holmdel, NJ, USA, AT&T Bell Lab, Holmdel, NJ, USA

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 24期

关键词：

714 Electronic Components and Tubes - 717 Optical Communication - 744 Lasers - 817 Plastics and Other Polymers: Products and Applications;

D O I：

10.1049/el:19870877

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

(Edited Abstract)

引用

页码：1263 / 1265

页数：3

共 12 条

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[2] HIGH-SPEED SEMICONDUCTOR-LASER DESIGN AND PERFORMANCE [J].

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[3]

CHENG WH, 1986, 10TH INT SEM LAS C K, P226

[4] INGAASP LASER WITH SEMIINSULATING CURRENT CONFINING LAYERS [J].

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[6]

KOREN U, 1986, 10TH IEEE INT SEM LA, P186

[7]

NISHIMOTO H, 1987, IEEE J QUANTUM ELECT, V23

[8] INGAASP BURIED HETEROSTRUCTURE LASER WITH 22 GHZ BANDWIDTH AND HIGH MODULATION EFFICIENCY [J].

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ELECTRONICS LETTERS, 1987, 23 (16) :839-841

[9] SINUSOIDAL AND DIGITAL HIGH-SPEED MODULATION OF P-TYPE SUBSTRATE MASS-TRANSPORTED DIODE-LASERS [J].

TSANG, DZ ;

LIAU, ZL .

JOURNAL OF LIGHTWAVE TECHNOLOGY, 1987, 5 (03) :300-304

[10] INGAASP/INP PLANAR BURIED HETEROSTRUCTURE LASERS WITH SEMIINSULATING INP CURRENT BLOCKING LAYERS GROWN BY MOCVD [J].

WAKAO, K ;

NAKAI, K ;

SANADA, T ;

KUNO, M ;

ODAGAWA, T ;

YAMAKOSHI, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1987, 23 (06) :943-947

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