EFFECT OF ANISOTROPY ON DISLOCATIONS AT YBA2CU3O7-X PRBA2CU3O7-X EPITAXIAL INTERFACES

The defect structure in the multilayer YBa2Cu3O7-x, (YBCO) with other materials is crucial to the performance of devices involving YBCO. Since the growth surface morphology during the deposition process of these films translates into the interface structure of the device, an understanding of the early stage of growth is necessary. Anisotropic elasticity is used here to map the stress fields in the YBCO system when it acts as an underlayer for Various surface tractions that arise due to the interfacial mismatches introduced by the deposition of a PrBa2Cu3O7-x (PBCO) film on this underlayer. The implications of the stress distribution for the dislocation glide in the YBCO layer are discussed.