INCREASING SHORT MINORITY-CARRIER DIFFUSION LENGTHS IN SOLAR-GRADE POLYCRYSTALLINE SILICON BY ULTRASOUND TREATMENT

被引：19

作者：

OSTAPENKO, SS ^{[1
]}

JASTRZEBSKI, L ^{[1
]}

LAGOWSKI, J ^{[1
]}

SOPORI, B ^{[1
]}

机构：

[1] NATL RENEWABLE ENERGY LAB,GOLDEN,CO 80401

来源：

APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 12期

关键词：

D O I：

10.1063/1.112942

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have found that ultrasound treatment (UST) has a profound effect on the recombination rate in as-grown, B-doped cast polycrystalline silicon wafers for photovoltaic applications. As determined by surface photovoltage measurements of the minority carrier diffusion length L, the UST increases the corresponding lifetime by almost an order of magnitude. The maximum enhancement takes place in the wafer regions with the shortest L values. For L > 20 mum, both positive and negative changes of L after UST are revealed at different wafer regions. The UST effect is temperature dependent and exhibits maximum influence at about 60-degrees-C. Enhanced dissociation of Fe-B pairs by UST is identified as a mechanism which leads to a negative change of large L values, and a complex post-treatment relaxation. A positive change of L is attributed to the influence of ultrasound vibrations on crystallographic defects.

引用

页码：1555 / 1557

页数：3

共 11 条

[1]

BUYANOVA IA, 1994, MATER SCI FORUM, V143-, P1063, DOI 10.4028/www.scientific.net/MSF.143-147.1063

[2]

GARYAGDYEV G, 1991, SOV PHYS SEMICOND+, V25, P248

[3]

Gromashevskii V. L., 1984, Ukrayins'kyi Fizychnyi Zhurnal, V29, P550

[4]

JASTRZEBSKI L, 1993, UNPUB OCT P NREL PV

[5] NONCONTACT MAPPING OF HEAVY-METAL CONTAMINATION FOR SILICON IC FABRICATION [J].

LAGOWSKI, J ;

EDELMAN, P ;

DEXTER, M ;

HENLEY, W .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (1A) :A185-A192

[6] IRON DETECTION IN THE PART PER QUADRILLION RANGE IN SILICON USING SURFACE PHOTOVOLTAGE AND PHOTODISSOCIATION OF IRON-BORON PAIRS [J].

LAGOWSKI, J ;

EDELMAN, P ;

KONTKIEWICZ, AM ;

MILIC, O ;

HENLEY, W ;

DEXTER, M ;

JASTRZEBSKI, L ;

HOFF, AM .

APPLIED PHYSICS LETTERS, 1993, 63 (22) :3043-3045

[7]

NOVICK AS, 1972, ANELASTIC RELAXATION, P324

[8]

Ostrovskii I. V., 1982, Soviet Physics - Solid State, V24, P682

[9]

ZDEBSKII AP, 1986, SOV PHYS SEMICOND+, V20, P1167

[10]

ZDEBSKII AP, 1987, SOV PHYS SEMICOND+, V21, P570

← 1 2 →