HIGH-SPEED OPTICAL-RESPONSE OF PSEUDOMORPHIC INGAAS HIGH ELECTRON-MOBILITY TRANSISTORS

被引：12

作者：

MARTIN, MZ ^{[1
]}

OSHITA, FK ^{[1
]}

MATLOUBIAN, M ^{[1
]}

FETTERMAN, HR ^{[1
]}

SHAW, L ^{[1
]}

TAN, KL ^{[1
]}

机构：

[1] TRW CO INC,DIV ELECTR & TECHNOL,REDONDO BEACH,CA 90278

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1992年 / 4卷 / 09期

关键词：

D O I：

10.1109/68.157132

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical response of very high-frequency pseudomorphic InGaAs HEMT's with f(T) of 140 GHz has been successfully performed. These measurements were done using the pi-cosecond time domain optoelectronic technique at room and low temperatures. The optical photovoltaic responses of these HEMT's show FWHM of 8.4 and 7.5 ps at room temperature and 20 K, respectively. Photoconductive responsivity as high as 4 A / W with an external quantum efficiency of > 600% is reported here.

引用

页码：1012 / 1014

页数：3

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