ELECTRON EMISSION FROM BREAKDOWN REGIONS IN SIC P-N JUNCTIONS

被引：35
作者：
PATRICK, L
CHOYKE, WJ
机构：
来源：
PHYSICAL REVIEW LETTERS | 1959年 / 2卷 / 02期
关键词：
D O I：
10.1103/PhysRevLett.2.48
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：48 / 50
页数：3
相关论文
共 6 条
[1]   ELECTRON EMISSION FROM AVALANCHE BREAKDOWN IN SILICON [J].
BURTON, JA .
PHYSICAL REVIEW, 1957, 108 (05) :1342-1343
[2]   ABSORPTION OF LIGHT IN ALPHA SIC NEAR THE BAND EDGE [J].
CHOYKE, WJ ;
PATRICK, L .
PHYSICAL REVIEW, 1957, 105 (06) :1721-1723
[3]   OXIDATION BEHAVIOR OF SILICON CARBIDE [J].
ERVIN, G .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1958, 41 (09) :347-352
[4]   STRUCTURE AND CHARACTERISTICS OF SILICON CARBIDE LIGHT-EMITTING JUNCTIONS [J].
PATRICK, L .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (07) :765-776
[5]   INTRINSIC OPTICAL ABSORPTION IN SINGLE-CRYSTAL SILICON CARBIDE [J].
PHILIPP, HR .
PHYSICAL REVIEW, 1958, 111 (02) :440-441
[6]   THEORY OF ELECTRON MULTIPLICATION IN SILICON AND GERMANIUM [J].
WOLFF, PA .
PHYSICAL REVIEW, 1954, 95 (06) :1415-1420
1