REDISTRIBUTION OF CR IN CAPLESS-ANNEALED GAAS UNDER ARSENIC PRESSURE

被引：36

作者：

KASAHARA, J

WATANABE, N

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 03期

关键词：

D O I：

10.1143/JJAP.19.L151

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L151 / L154

页数：4

共 9 条

[1]

CARSLAW HS, 1959, CONDUCTION HEAT SOLI, P70

[2] REDISTRIBUTION OF CR DURING ANNEALING OF SE-80-IMPLANTED GAAS [J].

EVANS, CA ;

DELINE, VR ;

SIGMON, TW ;

LIDOW, A .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :291-293

[3]

HUBER AM, 1979, APPL PHYS LETT, V34, P858, DOI 10.1063/1.90700

[4] CAPLESS ANNEAL OF ION-IMPLANTED GAAS IN CONTROLLED ARSENIC VAPOR [J].

KASAHARA, J ;

ARAI, M ;

WATANABE, N .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (01) :541-543

[5]

KASAHARA J, UNPUBLISHED

[6] BACK SURFACE GETTERING AND CR OUT-DIFFUSION IN VPE GAAS-LAYERS [J].

MAGEE, TJ ;

PENG, J ;

HONG, JD ;

EVANS, CA ;

DELINE, VR ;

MALBON, RM .

APPLIED PHYSICS LETTERS, 1979, 35 (03) :277-279

[7] DIFFUSION OF ANTIMONY OUT OF GERMANIUM AND SOME PROPERTIES OF THE ANTIMONY-GERMANIUM SYSTEM [J].

MILLER, RC ;

SMITS, FM .

PHYSICAL REVIEW, 1957, 107 (01) :65-70

[8] FORMATION OF CONDUCTIVE LAYER NEAR-SURFACE OF SEMI-INSULTING GAAS COVERED WITH OXIDE FILM [J].

SATO, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (02) :242-251

[9]

TUCK B, 1978, GALLIUM ARSENIDE REL, P114

← 1 →