CHARACTERISTICS OF THE BEHAVIOR OF RADIATION DEFECTS IN ALXGA1-XAS/GAAS STRUCTURES

被引：0
作者：
BRUNKOV, PN
KALINOVSKII, VS
KONNIKOV, SG
SOBOLEV, MM
SULIMA, OV
机构：
来源：
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1990年 / 24卷 / 07期
关键词：
D O I：
暂无
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
引用
收藏
页码：830 / 831
页数：2
相关论文
共 6 条
[1]  
ANDREEV VM, 1988, SOV PHYS SEMICOND+, V22, P881
[2]  
Bourgoin J., 1983, SPRINGER SERIES SOLI, V35
[3]  
BRUNKOV PN, 1989, SOV PHYS SEMICOND+, V23, P1044
[4]   DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].
LANG, DV .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032
[5]   ELECTRONICALLY CONTROLLED METASTABLE DEFECT REACTION IN INP [J].
LEVINSON, M ;
BENTON, JL ;
KIMERLING, LC .
PHYSICAL REVIEW B, 1983, 27 (10) :6216-6221
[6]   DEFECT PAIRS AND CLUSTERS RELATED TO THE EL2 CENTER IN GAAS [J].
MAKRAMEBEID, S ;
BOHER, P .
REVUE DE PHYSIQUE APPLIQUEE, 1988, 23 (05) :847-862
1