CONTROL OF RF SPUTTERED FILM PROPERTIES THROUGH SUBSTRATE TUNING

被引:78
作者
LOGAN, JS
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10.1147/rd.142.0172
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TP3 [计算技术、计算机技术];
学科分类号
0812 ;
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页码:172 / &
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[1]  
BUTLER HS, 1961, 820 STANF U REP
[2]   APPLICATION OF RF DISCHARGES TO SPUTTERING [J].
KOENIG, HR ;
MAISSEL, LI .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :168-&
[3]   RE-EMISSION OF SPUTTERED SIO2 DURING GROWTH AND ITS RELATION TO FILM QUALITY [J].
MAISSEL, LI ;
JONES, RE ;
STANDLEY, CL .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :176-&
[4]   THIN FILMS DEPOSITED BY BIAS SPUTTERING [J].
MAISSEL, LI ;
SCHAIBLE, PM .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (01) :237-&
[5]   PROPERTIES OF INSULATING THIN FILMS DEPOSITED BY RF SPUTTERING [J].
PLISKIN, WA ;
DAVIDSE, PD ;
LEHMAN, HS ;
MAISSEL, LI .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1967, 11 (04) :461-&
[6]   EVIDENCE FOR OXIDATION GROWTH AT THE OXIDE-SILICON INTERFACE FROM CONTROLLED ETCH STUDIES [J].
PLISKIN, WA ;
GNALL, RP .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1964, 111 (07) :872-873
[7]   ARGON CONTENT OF SIO2 FILMS DEPOSITED BY RF SPUTTERING IN ARGON [J].
SCHWARTZ, GC ;
JONES, RE .
IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (01) :52-&
[8]   GAS INCORPORATION INTO SPUTTERED FILMS [J].
WINTERS, HF ;
KAY, E .
JOURNAL OF APPLIED PHYSICS, 1967, 38 (10) :3928-&