FORMATION OF LOW DISLOCATION DENSITY SILICON-ON-INSULATOR BY A SINGLE IMPLANTATION AND ANNEALING

被引:15
作者
ELGHOR, MK [1 ]
PENNYCOOK, SJ [1 ]
NAMAVAR, F [1 ]
KARAM, NH [1 ]
机构
[1] SPIRE CORP, BEDFORD, MA 01730 USA
关键词
D O I
10.1063/1.104213
中图分类号
O59 [应用物理学];
学科分类号
摘要
High quality silicon-on-insulator structures have been formed with dislocation densities in the top silicon layer below 104 cm -2 by oxygen implantation and one-step annealing at 1300 °C for 6 h. Careful control of the implantation conditions is required in order to produce a high density of cavities in the top silicon layer. These cavities provide a stress-free sink for silicon and oxygen interstitials, reducing the point-defect supersaturations and, therefore, the nucleation and growth of oxide precipitates and dislocation loops. They also provide an internal surface which blocks free propagation of dislocation loops to the surface avoiding the formation of threading dislocations. With continued annealing, both the cavities and the oxide precipitates eventually dissolve, leaving a high quality silicon surface layer with a very low dislocation density.
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页码:156 / 158
页数:3
相关论文
共 21 条
[1]  
Brimhall J.L., 1972, RAD INDUCED VOIDS ME, P338
[2]   HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].
CELLER, GK ;
HEMMENT, PLF ;
WEST, KW ;
GIBSON, JM .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534
[3]  
CHEEK TF, 1988, MATER RES SOC S P, V107, P53
[4]  
CHEN CED, 1988, MATER RES SOC S P, V107, P309
[5]  
ELGHOR MK, 1987, MATER RES SOC S P, V74, P591
[6]  
ELGHOR MK, 1988, MATER RES SOC S P, V107, P79
[7]  
HARKNESS SD, 1969, RADIATION DAMAGE REA, V2, P189
[8]   THE REDUCTION OF DISLOCATIONS IN OXYGEN IMPLANTED SILICON-ON-INSULATOR LAYERS BY SEQUENTIAL IMPLANTATION AND ANNEALING [J].
HILL, D ;
FRAUNDORF, P ;
FRAUNDORF, G .
JOURNAL OF APPLIED PHYSICS, 1988, 63 (10) :4933-4936
[9]   INFLUENCE OF SUBSTRATE-TEMPERATURE ON THE FORMATION OF BURIED OXIDE AND SURFACE CRYSTALLINITY DURING HIGH-DOSE OXYGEN IMPLANTATION INTO SI [J].
HOLLAND, OW ;
SJOREEN, TP ;
FATHY, D ;
NARAYAN, J .
APPLIED PHYSICS LETTERS, 1984, 45 (10) :1081-1083
[10]   MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J].
JAUSSAUD, C ;
STOEMENOS, J ;
MARGAIL, J ;
DUPUY, M ;
BLANCHARD, B ;
BRUEL, M .
APPLIED PHYSICS LETTERS, 1985, 46 (11) :1064-1066