TRANSIENT TEMPERATURE PROFILES WITHIN ACTIVE REGION OF UNIFORMLY DOPED AND HIGH-LOW DOPED SCHOTTKY IMPATTS

被引：9
作者：
AMOSS, JW
ELFE, TB
机构：
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1978年 / 25卷 / 09期
关键词：
D O I：
10.1109/T-ED.1978.19242
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1160 / 1166
页数：7
相关论文
共 17 条
[1]   THERMAL PROPERTIES OF ANNULAR AND ARRAY GEOMETRY SEMICONDUCTOR-DEVICES ON COMPOSITE HEAT SINKS [J].
BOARD, K .
SOLID-STATE ELECTRONICS, 1973, 16 (12) :1315-1320
[2]  
COX NW, 1977, 11TH ANN AS C CIRC S
[3]  
GIBBONS G, 1978, SOLID STATE ELECTRON, V11, P1007
[4]  
HAITZ RH, 1968, IEEE T ELECTRON DEVI, V15
[5]   TEMPERATURE DEPENDENCE OF AVALANCHE BREAKDOWN IN GALLIUM ARSENIDE P-N JUNCTIONS [J].
HALL, R ;
LECK, JH .
INTERNATIONAL JOURNAL OF ELECTRONICS, 1968, 25 (06) :539-&
[6]   APPROXIMATE FORMULAS FOR THERMAL-RESISTANCE OF IMPATT DIODES COMPARED WITH COMPUTER CALCULATIONS [J].
HOLWAY, LH ;
ADLERSTEIN, MG .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :156-159
[7]   FILAMENTARY THERMAL INSTABILITIES IN IMPATT DIODES [J].
HOLWAY, LH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (02) :80-86
[8]   HEAT-TRANSPORT AND CURRENT CROWDING IN IMPATT DIODES [J].
HOLWAY, LH .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (12) :1304-1312
[9]   HIGH-TEMPERATURE STABILITY OF AU PT-N-GAAS SCHOTTKY-BARRIER DIODES [J].
MURARKA, SP .
SOLID-STATE ELECTRONICS, 1974, 17 (08) :869-876
[10]   THERMAL RUNAWAY OF IMPATT DIODES [J].
OLSON, HM .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (04) :165-168
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