SELF-CONSISTENT CALCULATION OF IMPURITY SCATTERING IN INVERSION LAYERS

被引：21

作者：

VINTER, B

机构：

[1] Physik-Department E 16, Technische Universität München

来源：

SOLID STATE COMMUNICATIONS | 1978年 / 28卷 / 10期

关键词：

D O I：

10.1016/0038-1098(78)90174-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The local density-functional method has been applied to the calculation of the influence of an ionized impurity on the electrons in an inversion layer on the surface of silicon. Compared to linear screening theories this theory shows improved agreement with experiments on the mobility. The bound state associated with the self-consistent potential has a very small binding energy. © 1978.

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页码：861 / 863

页数：3

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