ELECTRONIC TRANSPORT THROUGH VERY SHORT AND NARROW CHANNELS CONSTRICTED IN GAAS BY HIGHLY RESISTIVE GA-IMPLANTED REGIONS

被引：59
作者：
HIRAYAMA, Y
SAKU, T
HORIKOSHI, Y
机构：
来源：
PHYSICAL REVIEW B | 1989年 / 39卷 / 08期
关键词：
D O I：
10.1103/PhysRevB.39.5535
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
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页码：5535 / 5537
页数：3
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