LOW-RESISTANCE AUZN GATE OHMIC CONTACTS FOR INP JFETS

被引：15
作者：
BOOS, JB
KRUPPA, W
机构：
[1] GEORGE MASON UNIV,FAIRFAX,VA 22030
[2] SACHS FREEMAN ASSOCIATES,LANDOVER,MD 20785
来源：
SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 02期
关键词：
D O I：
10.1016/0038-1101(88)90119-0
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：127 / 133
页数：7
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