LOW-RESISTANCE AUZN GATE OHMIC CONTACTS FOR INP JFETS

被引：15

作者：

BOOS, JB

KRUPPA, W

机构：

[1] GEORGE MASON UNIV,FAIRFAX,VA 22030

[2] SACHS FREEMAN ASSOCIATES,LANDOVER,MD 20785

来源：

SOLID-STATE ELECTRONICS | 1988年 / 31卷 / 02期

关键词：

D O I：

10.1016/0038-1101(88)90119-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：127 / 133

页数：7

共 14 条

[1] PLANAR FULLY ION-IMPLANTED INP POWER JUNCTION FETS
BOOS, JB
BINARI, SC
KELNER, G
THOMPSON, PE
WENG, TH
PAPANICOLAOU, NA
HENRY, RL
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (07) : 273 - 276
[2] LOW-RESISTANCE OHMIC CONTACTS TO P-INP
CHENG, CL
COLDREN, LA
MILLER, BI
RENTSCHLER, JA
SHEN, CC
[J]. ELECTRONICS LETTERS, 1982, 18 (17) : 755 - 756
[3] OHMIC CONTACTS FOR GAAS DEVICES
COX, RH
STRACK, H
[J]. SOLID-STATE ELECTRONICS, 1967, 10 (12) : 1213 - +
[4] DETERMINATION OF THE BASIC DEVICE PARAMETERS OF A GAAS-MESFET
FUKUI, H
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1979, 58 (03): : 771 - 797
[5] PARASITIC BLUK RESISTANCES IN JUNCTION-GATE FETS
GREBENE, AB
[J]. PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1967, 55 (11): : 2031 - &
[6] HOT-PLATE ALLOYING FOR OHMIC CONTACTS TO GAAS
HENRY, HG
DAWSON, DE
LEMNIOS, ZJ
KIM, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) : 1100 - 1103
[7] INTERACTION OF AU/ZN/AU SANDWICH CONTACT LAYERS WITH AIIIBV COMPOUND SEMICONDUCTORS
KAMINSKA, E
PIOTROWSKA, A
BARCZ, A
ADAMCZEWSKA, J
TUROS, A
[J]. SOLID-STATE ELECTRONICS, 1986, 29 (03) : 279 - 286
[8] LOW RESISTANCE OHMIC CONTACTS TO NORMAL-INP AND PARA-INP
KUPHAL, E
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (01) : 69 - &
[9] CURRENT CROWDING ON METAL CONTACTS TO PLANAR DEVICES
MURRMANN, H
WIDMANN, D
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (12) : 1022 - &
[10] VERY LOW RESISTANCE OHMIC CONTACTS ON P-TYPE INP BY DIRECT PLATING
TABATABAIEALAVI, K
CHOUDHURY, ANMM
SLATER, NJ
FONSTAD, CG
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (05) : 398 - 400

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