ROLE OF POINT-DEFECT SCATTERING IN THE LATTICE THERMAL-CONDUCTIVITY OF AN INSULATOR - APPLICATION TO GAAS

被引：2

作者：

ALEDANI, MC

DUBEY, KS

机构：

[1] Department of Physics, College of Science, University of Basrah, Basrah

来源：

ACTA PHYSICA ACADEMIAE SCIENTIARUM HUNGARICAE | 1979年 / 46卷 / 03期

关键词：

D O I：

10.1007/BF03159429

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The role of the point-defect scattering relaxation rate has been studied in the lattice thermal conductivity of an insulator by calculating the lattice thermal conductivity of GaAs for the different values of the point-defect scattering strength. All calculations have been performed in the frame of the recently proposed model of Dubey and Misho of the phonon conductivity of an insulator. The study is made for low as well as high values of the point-defect scattering strength in the entire temperature range 4-100 K. © 1979 with the authors.

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页码：177 / 183

页数：7

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