ELECTRICAL AND OPTICAL-PROPERTIES OF N-TYPE SEMICONDUCTING CHALCOGENIDE GLASSES IN THE SYSTEM GE-BI-SE

被引：208

作者：

TOHGE, N

MINAMI, T

YAMAMOTO, Y

TANAKA, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1980年 / 51卷 / 02期

关键词：

D O I：

10.1063/1.327710

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1048 / 1053

页数：6

共 25 条

[1]

DANILOV AV, 1964, SOV PHYS-SOL STATE, V5, P1472

[2] CONDUCTION IN NON-CRYSTALLINE SYSTEMS .5. CONDUCTIVITY, OPTICAL ABSORPTION AND PHOTOCONDUCTIVITY IN AMORPHOUS SEMICONDUCTORS [J].

DAVIS, EA ;

MOTT, NF .

PHILOSOPHICAL MAGAZINE, 1970, 22 (179) :903-&

[3] CHEMICAL BONDING IN BISMUTH TELLURIDE [J].

DRABBLE, JR ;

GOODMAN, CHL .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1958, 5 (1-2) :142-144

[4]

Flasck R., 1972, J NON-CRYST SOLIDS, V8, P326

[5] EFFECT OF CHARGED ADDITIVES ON CARRIER CONCENTRATIONS IN LONE-PAIR SEMICONDUCTORS [J].

FRITZSCHE, H ;

KASTNER, M .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (03) :285-292

[6]

FRITZSCHE H, 1973, ELECTRONIC STRUCTURA, P55

[7]

KASTNER M, 1978, PHILOS MAG, V37, P127, DOI 10.1080/13642817808245313

[8] VALENCE-ALTERNATION MODEL FOR LOCALIZED GAP STATES IN LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

ADLER, D ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1976, 37 (22) :1504-1507

[9] DEFECT CHEMISTRY OF LONE-PAIR SEMICONDUCTORS [J].

KASTNER, M ;

FRITZSCHE, H .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1978, 37 (02) :199-215

[10]

KOLOMIETS BT, 1974, SOV PHYS SEMICOND+, V8, P348

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