ION IMPLANTATION DOPING OF ZINC SULPHIDE THIN FILMS

被引：9

作者：

BROWN, MR

COX, AFJ

SHAND, WA

WILLIAMS, JM

机构：

来源：

SOLID STATE COMMUNICATIONS | 1971年 / 9卷 / 01期

关键词：

D O I：

10.1016/0038-1098(71)90048-2

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：37 / &

共 9 条

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ANDERSON, WW ;

MITCHELL, JT .

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[2] TB3+ AS RECOMBINATION CENTER IN ZNS [J].

ANDERSON, WW .

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[3]

ANDERSON WW, 1967, T MET SOC AIME, V239, P350

[4] HIGH CONDUCTIVITY P-TYPE CDS [J].

CHERNOW, F ;

ELDRIDGE, G ;

RUSE, G ;

WAHLIN, L .

APPLIED PHYSICS LETTERS, 1968, 12 (10) :339-&

[5]

GARLICK GFJ, 1966, LUMINESCENCE INORGAN, P687

[6] DOPING OF SEMICONDUCTORS BY ION BOMBARDMENT [J].

GIBBONS, JF ;

MOLL, JL ;

MEYER, NI .

NUCLEAR INSTRUMENTS & METHODS, 1965, 38 (DEC) :165-&

[7]

HILL J, SRDE69049 REP

[8] LUMINESCENCE FROM ERBIUM-ACTIVATED GROUP 2-6 COMPOUNDS CONTAINING ALKALI METAL COMPENSATORS [J].

LARACH, S ;

SHRADER, RE ;

YOCOM, PN .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1969, 116 (04) :471-&

[9]

Nelson R. S., 1968, OBSERVATION ATOMIC C

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