PARA-TYPE CDTE EPILAYERS GROWN BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY

被引：70
作者：
BICKNELL, RN
GILES, NC
SCHETZINA, JF
机构：
来源：
APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 25期
关键词：
D O I：
10.1063/1.97231
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1735 / 1737
页数：3
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  • [1] GROWTH OF HIGH MOBILITY N-TYPE CDTE BY PHOTOASSISTED MOLECULAR-BEAM EPITAXY
    BICKNELL, RN
    GILES, NC
    SCHETZINA, JF
    [J]. APPLIED PHYSICS LETTERS, 1986, 49 (17) : 1095 - 1097
  • [2] STIMULATED-EMISSION FROM A CD1-XMNXTE-CDTE MULTILAYER STRUCTURE
    BICKNELL, RN
    GILESTAYLOR, NC
    SCHETZINA, JF
    ANDERSON, NG
    LAIDIG, WD
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (03) : 238 - 240
  • [3] CD1-XMNX TE-CDTE MULTILAYERS GROWN BY MOLECULAR-BEAM EPITAXY
    BICKNELL, RN
    YANKA, RW
    GILESTAYLOR, NC
    BLANKS, DK
    BUCKLAND, EL
    SCHETZINA, JF
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (01) : 92 - 94
  • [4] DILUTE MAGNETIC SEMICONDUCTOR (CD1-XMNXTE) QUANTUM WELL LASER
    BICKNELL, RN
    GILESTAYLOR, NC
    BLANKS, DK
    SCHETZINA, JF
    ANDERSON, NG
    LAIDIG, WD
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (12) : 1122 - 1124
  • [5] ISAACS ED, 1986, APPL PHYS LETT, V48, P27
  • [6] MOLECULAR-BEAM EPITAXY OF DILUTED MAGNETIC SEMICONDUCTOR (CD1-XMNXTE) SUPERLATTICES
    KOLODZIEJSKI, LA
    BONSETT, TC
    GUNSHOR, RL
    DATTA, S
    BYLSMA, RB
    BECKER, WM
    OTSUKA, N
    [J]. APPLIED PHYSICS LETTERS, 1984, 45 (04) : 440 - 442
  • [7] ACCEPTOR STATES IN CDTE AND COMPARISON WITH ZNTE - GENERAL TRENDS
    MOLVA, E
    PAUTRAT, JL
    SAMINADAYAR, K
    MILCHBERG, G
    MAGNEA, N
    [J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3344 - 3354
  • [8] GROWTH OF CDTE-FILMS ON SAPPHIRE BY MOLECULAR-BEAM EPITAXY
    MYERS, TH
    LO, Y
    BICKNELL, RN
    SCHETZINA, JF
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (03) : 247 - 248
  • [9] GROWTH OF LOW DISLOCATION DENSITY CDTE-FILMS ON HYDROPLANED CDTE SUBSTRATES BY MOLECULAR-BEAM EPITAXY
    MYERS, TH
    SCHETZINA, JF
    MAGEE, TJ
    ORMOND, RD
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (03): : 1598 - 1603
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