CURRENT-INDUCED FREQUENCY-MODULATION IN DIODE-LASERS

被引：75

作者：

DANDRIDGE, A

GOLDBERG, L

机构：

来源：

ELECTRONICS LETTERS | 1982年 / 18卷 / 07期

关键词：

D O I：

10.1049/el:19820206

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：302 / 304

页数：3

共 8 条

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[3] TIME-DEPENDENT THERMAL EFFECTS IN CURRENT-MODULATED SEMICONDUCTOR-LASERS [J].

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ELECTRONICS LETTERS, 1981, 17 (14) :497-499

[4] CARRIER DENSITY DEPENDENCE OF REFRACTIVE-INDEX IN ALGAAS SEMICONDUCTOR-LASERS [J].

ITO, M ;

KIMURA, T .

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OPTICS LETTERS, 1980, 5 (04) :139-141

[6] MODULATION FREQUENCY-CHARACTERISTICS OF DIRECTLY OPTICAL FREQUENCY MODULATED ALGAAS SEMICONDUCTOR-LASER [J].

KOBAYASHI, S ;

YAMAMOTO, Y ;

KIMURA, T .

ELECTRONICS LETTERS, 1981, 17 (10) :350-351

[7] OPTICAL HETERODYNE-DETECTION OF DIRECTLY FREQUENCY MODULATED SEMICONDUCTOR-LASER SIGNALS [J].

SAITO, S ;

YAMAMOTO, Y ;

KIMURA, T .

ELECTRONICS LETTERS, 1980, 16 (22) :826-827

[8]

SZE SM, 1969, PHYSICS SEMICONDUCTO

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