CURRENT-VOLTAGE CHARACTERISTICS OF POROUS-SILICON LAYERS

被引：73
作者：
DIMITROV, DB
机构：
[1] Institute of Solid State Physics, Bulgarian Academy of Sciences, Sofia-1784
来源：
PHYSICAL REVIEW B | 1995年 / 51卷 / 03期
关键词：
D O I：
10.1103/PhysRevB.51.1562
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The current-voltage characteristics of porous-silicon structures are presented and discussed. Evidence is given that the forward and reverse currents show Schottky-junction-like behavior. Experimental measurements of reverse I-V curves at different ambient humidities demonstrate that the reverse current depends strongly on this parameter. The results are discussed in the light of generation-recombination processes in the porous-silicon depletion region. The presence of an inflection point in the reverse I-V curves is explained by the energy-band-gap difference between porous silicon and the crystalline silicon substrate. © 1995 The American Physical Society.
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页码：1562 / 1566
页数：5
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