SMALL-SIGNAL NON-LINEAR CURCUIT MODEL OF GAAS-MESFET

被引：15

|

作者：

SHUR, MS

机构：

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 08期

关键词：

D O I：

10.1016/0038-1101(79)90080-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：723 / 728

页数：6

相关论文

共 50 条

[21] A non-linear GaAs MESFET drain current model for microwave characteristics
Fujii, K
Ogawa, K
Takano, Y
ELECTRONICS AND COMMUNICATIONS IN JAPAN PART II-ELECTRONICS, 1997, 80 (07): : 27 - 36
[22] MODELING OF GUNN DOMAIN EFFECTS IN THE OUTPUT CONDUCTANCE OF THE HIGH-FREQUENCY SMALL-SIGNAL GAAS-MESFET EQUIVALENT-CIRCUIT
MAGERKO, MA
CHANG, K
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1992, 5 (14) : 748 - 752
[23] LARGE-SIGNAL MODELING OF GAAS-MESFET OPERATION
SNOWDEN, CM
HOWES, MJ
MORGAN, DV
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (12) : 1817 - 1824
[24] GENERALIZED-MODEL FOR GAAS-MESFET PHOTODETECTORS
ADIBI, A
ESHRAGHIAN, K
IEE PROCEEDINGS-G CIRCUITS DEVICES AND SYSTEMS, 1989, 136 (06): : 337 - 343
[25] MICROWAVE MODEL OF AN OPTICALLY CONTROLLED GAAS-MESFET
CHAKRABARTI, P
MISHRA, BK
KUMAR, KS
SHRESTHA, SK
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS, 1995, 8 (06) : 296 - 300
[26] GAAS-MESFET MODEL ADDS LIFE TO SPICE
WHITE, WA
NAMORDI, MR
MICROWAVES & RF, 1984, 23 (09) : 197 - 200
[27] THE LINEAR STATISTICAL DC MODEL OF GAAS-MESFET USING FACTOR-ANALYSIS
DOBRZANSKI, L
SOLID-STATE ELECTRONICS, 1995, 38 (02) : 487 - 495
[28] IMPROVED JUNCTION CAPACITANCE MODEL FOR THE GAAS-MESFET
RODRIGUEZTELLEZ, J
MEZHER, K
ALDAAS, M
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1993, 40 (11) : 2083 - 2085
[29] GAAS-MESFET WITH LATERAL NON-UNIFORM DOPING
WANG, YC
BAHRAMI, M
INTERNATIONAL JOURNAL OF ELECTRONICS, 1984, 57 (05) : 665 - 676
[30] A NEW MODEL FOR THE DUAL-GATE GAAS-MESFET
LICQURISH, C
HOWES, MJ
SNOWDEN, CM
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (10) : 1497 - 1505

← 1 2 3 4 5 →