SMALL-SIGNAL NON-LINEAR CURCUIT MODEL OF GAAS-MESFET

被引：15

|

作者：

SHUR, MS

机构：

来源：

SOLID-STATE ELECTRONICS | 1979年 / 22卷 / 08期

关键词：

D O I：

10.1016/0038-1101(79)90080-7

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：723 / 728

页数：6

相关论文

共 50 条

[1] NON-LINEAR MODEL OF GAAS-MESFET
STAROSELSKY, VI
RADIOTEKHNIKA I ELEKTRONIKA, 1981, 26 (06): : 1299 - 1306
[2] NON-LINEAR LUMPED CIRCUIT MODEL OF GAAS-MESFET
CHUA, LO
SING, YW
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) : 825 - 833
[3] MINIMIZATION OF INTERMODULATION DISTORTION IN GAAS-MESFET SMALL-SIGNAL AMPLIFIERS
CROSMUN, AM
MAAS, SA
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1989, 37 (09) : 1411 - 1417
[4] INVESTIGATION OF GAAS-MESFET SMALL-SIGNAL EQUIVALENT-CIRCUITS FOR USE IN A CELL LIBRARY
MULLER, JE
19TH EUROPEAN MICROWAVE CONFERENCE : MICROWAVE 89, 1989, : 991 - 996
[5] A LARGE-SIGNAL MODEL FOR THE GAAS-MESFET
MADJAR, A
ROSENBAUM, FJ
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1981, 29 (08) : 781 - 788
[6] A GAAS-MESFET SMALL-SIGNAL EQUIVALENT-CIRCUIT INCLUDING TRANSMISSION-LINE EFFECTS
FJELDLY, TA
PAULSEN, A
JENSEN, O
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (09) : 1557 - 1563
[7] A new small-signal model of the dual-gate GaAs MESFET
Ibrahim, M
Syrett, B
Bennett, J
ICM 2003: PROCEEDINGS OF THE 15TH INTERNATIONAL CONFERENCE ON MICROELECTRONICS, 2003, : 260 - 263
[8] A LARGE-SIGNAL, ANALYTIC MODEL FOR THE GAAS-MESFET
KHATIBZADEH, MA
TREW, RJ
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1988, 36 (02) : 231 - 238
[9] A TEMPERATURE MODEL FOR THE GAAS-MESFET
CURTICE, WR
YUN, YH
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 954 - 962
[10] A CAPACITANCE MODEL FOR GAAS-MESFET
SCHEINBERG, N
CHISHOLM, E
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1991, 26 (10) : 1467 - 1470

← 1 2 3 4 5 →