ARF LASER PHOTOLYSIS OF OCSE .1. SE(1S) QUENCHING PROCESSES

被引：7

作者：

BISCHEL, WK

BLACK, G

HAWKINS, RT

KLIGLER, DJ

RHODES, CK

机构：

[1] Molecular Physics Laboratory, SRI International, Menlo Park

[2] Department of Physics, University of Illinois, Chicago

[3] Department of Electrical Engineering, Stanford University, Stanford

来源：

JOURNAL OF CHEMICAL PHYSICS | 1979年 / 70卷 / 12期

关键词：

D O I：

10.1063/1.437434

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Quenching rates for Se(1S) and Se2 by OCSe have been measured using ArF laser photolysis of OCSe at 193 nm for the generation of Se(1S) atoms and the reactive mechanism Se(1S) + OCSe→Se2 + CO as the source of Se2. The experimentally determined quenching rates are (1.6±0.4)X 10-10 and 4.6x10-11cm3 molecule-1 sec-1 for the processes OCSe + Se(1S) and OCSe + Se2, respectively. Evidence is presented which demonstrates that the Se2 is formed initially in a state other than the strongly radiating B 3Σu- level. © 1979 American Institute of Physics.

引用

页码：5589 / 5592

页数：4

共 26 条

[1]

Basov N. G., 1976, Soviet Journal of Quantum Electronics, V6, P505, DOI 10.1070/QE1976v006n04ABEH011201

[2] QUENCHING OF ELECTRONICALLY EXCITED SELENIUM ATOMS, SE(S-1(0) [J].