MOLECULAR-BEAM EPITAXIAL-GROWTH AND CHARACTERIZATION OF LEAD-TELLURIDE FOR LASER-DIODES

被引：30
|
作者：
PARTIN, DL
机构：
来源：
JOURNAL OF ELECTRONIC MATERIALS | 1981年 / 10卷 / 02期
关键词：
D O I：
10.1007/BF02654796
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：313 / 325
页数：13
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