SLOW CAPTURE OF HOLES AND ELECTRONS BY SURFACE STATES ON GERMANIUM AND SILICON AT LOW TEMPERATURES

被引：8

作者：

MORRISON, SR

机构：

来源：

PHYSICAL REVIEW | 1959年 / 114卷 / 02期

关键词：

D O I：

10.1103/PhysRev.114.437

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：437 / 444

页数：8

共 9 条

[1]

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[9]

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