MAIN ELECTRON TRAPS IN IN1-XGAXP (0.12 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 0.96)

被引:23
作者
MATSUMOTO, T
KATO, T
TAKIGUCHI, M
ISHIDA, T
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1989年 / 28卷 / 03期
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D O I
10.1143/JJAP.28.410
中图分类号
O59 [应用物理学];
学科分类号
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页码:410 / 417
页数:8
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共 22 条
[1]   ELECTROREFLECTANCE AND BAND-STRUCTURE OF GAXIN1-XP ALLOYS [J].
ALIBERT, C ;
CHEVALLI.J ;
BORDURE, G ;
LAUGIER, A .
PHYSICAL REVIEW B, 1972, 6 (04) :1301-&
[2]   GALNP GROWN BY MOLECULAR-BEAM EPITAXY DOPED WITH BE AND SN [J].
BLOOD, P ;
ROBERTS, JS ;
STAGG, JP .
JOURNAL OF APPLIED PHYSICS, 1982, 53 (04) :3145-3149
[3]   BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].
EHRENREICH, H .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&
[4]   ELECTRONIC-PROPERTIES OF SELENIUM-DOPED SILICON [J].
GRIMMEISS, HG ;
JANZEN, E ;
SKARSTAM, B .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3740-3745
[5]   PHOTOCAPACITANCE STUDIES OF OXYGEN DONOR IN GAP .2. CAPTURE CROSS-SECTIONS [J].
HENRY, CH ;
KUKIMOTO, H ;
MILLER, GL ;
MERRITT, FR .
PHYSICAL REVIEW B, 1973, 7 (06) :2499-2507
[6]   ROOM-TEMPERATURE CW OPERATION OF INGAP/INGAAIP VISIBLE-LIGHT LASER-DIODES ON GAAS SUBSTRATES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
ISHIKAWA, M ;
OHBA, Y ;
SUGAWARA, H ;
YAMAMOTO, M ;
NAKANISI, T .
APPLIED PHYSICS LETTERS, 1986, 48 (03) :207-208
[7]   HALL-MOBILITY OF TE-DOPED IN1-XGAXP AT 300 K [J].
KATO, T ;
SHIMIZU, A ;
ISHIDA, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1974, 13 (09) :1481-1482
[8]   OBSERVATION OF DONOR-RELATED DEEP LEVELS IN GAXIN1-XP (0.52-LESS-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.71) [J].
KITAHARA, K ;
HOSHINO, M ;
OZEKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1988, 27 (01) :L110-L112
[9]   ROOM-TEMPERATURE CW OPERATION OF ALGALNP DOUBLE-HETEROSTRUCTURE VISIBLE LASERS [J].
KOBAYASHI, K ;
KAWATA, S ;
GOMYO, A ;
HINO, I ;
SUZUKI, T .
ELECTRONICS LETTERS, 1985, 21 (20) :931-932
[10]  
KRESSEL H, 1977, SEMICONDUCTOR LASER, P363