MECHANISMS OF LAYER GROWTH DURING MOLECULAR-BEAM EPITAXY OF SEMICONDUCTOR-FILMS

被引：4
作者：
JOYCE, BA
SHITARA, T
FAHY, MR
SATO, K
NEAVE, JH
FAWCETT, PN
KAMIYA, I
ZHANG, XM
机构：
[1] Interdisciplinary Research Centre for Semiconductor Materials, The Blackett Laboratory, Imperial College of Science, Technology and Medicine, London, SW7 2BZ, Prince Consort Road
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1995年 / 30卷 / 2-3期
关键词：
MOLECULAR BEAM EPITAXY; RHEED; SURFACE DYNAMICS; SEMICONDUCTORS;
D O I：
10.1016/0921-5107(94)09003-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
This paper reviews our present understanding of particular aspects of the surface processes involved in the growth of epitaxial semiconductor films by molecular beam epitaxy. Emphasis is placed on adatom migration and incorporation on GaAs (001) substrates during the growth of GaAs, a comparison with equivalent growth effects on (110) and (111)A oriented substrates, and the influence of mismatch and substrate orientation on growth mode and strain relaxation in the InAs/GaAs system. A brief indication of surface segregation behaviour is also included.
引用
收藏
页码：87 / 97
页数：11
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