RAMAN-SCATTERING STUDY OF GAP/INP STRAINED-LAYER SUPERLATTICES

被引：15
作者：
ALONSO, MI
CASTRILLO, P
ARMELLES, G
RUIZ, A
RECIO, M
BRIONES, F
机构：
[1] Centro Nacional de Microelectrnica, 28006 Madrid
来源：
PHYSICAL REVIEW B | 1992年 / 45卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.45.9054
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We discuss the first-order Raman spectra of short-period GaP/InP strained-layer superlattices grown by atomic-layer molecular-beam epitaxy on {001} GaAs substrates. Experimental spectra are successfully explained and compared to the results of simulations consisting of a linear-chain-method calculation combined with the bond-polarizability model.
引用
收藏
页码：9054 / 9058
页数：5
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