共 11 条
ELECTRICAL CHARACTERISTICS OF CARBON-DOPED GAAS
被引:3
作者:

KIM, SI
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KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

KIM, MS
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KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

KIM, Y
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KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

EOM, KS
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KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

MIN, SK
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KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

LEE, CC
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KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA
机构:
[1] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA
关键词:
D O I:
10.1007/BF00506326
中图分类号:
T [工业技术];
学科分类号:
08 ;
摘要:
[No abstract available]
引用
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页码:1251 / 1252
页数:2
相关论文
共 11 条
[1]
LPMOCVD GROWTH OF C-DOPED GAAS-LAYERS AND ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS
[J].
ASHIZAWA, Y
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NODA, T
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MORIZUKA, K
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ASAKA, M
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OBARA, M
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JOURNAL OF CRYSTAL GROWTH,
1991, 107 (1-4)
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ASHIZAWA, Y
论文数: 0 引用数: 0
h-index: 0
机构: Toshiba Research, Development Center, 1 Komukai Toshiba Cho, Saiwai-Ku, Kawasaki

NODA, T
论文数: 0 引用数: 0
h-index: 0
机构: Toshiba Research, Development Center, 1 Komukai Toshiba Cho, Saiwai-Ku, Kawasaki

MORIZUKA, K
论文数: 0 引用数: 0
h-index: 0
机构: Toshiba Research, Development Center, 1 Komukai Toshiba Cho, Saiwai-Ku, Kawasaki

ASAKA, M
论文数: 0 引用数: 0
h-index: 0
机构: Toshiba Research, Development Center, 1 Komukai Toshiba Cho, Saiwai-Ku, Kawasaki

OBARA, M
论文数: 0 引用数: 0
h-index: 0
机构: Toshiba Research, Development Center, 1 Komukai Toshiba Cho, Saiwai-Ku, Kawasaki
[2]
CARBON DIFFUSION IN UNDOPED, N-TYPE, AND P-TYPE GAAS
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CUNNINGHAM, BT
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GUIDO, LJ
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BAKER, JE
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MAJOR, JS
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HOLONYAK, N
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STILLMAN, GE
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APPLIED PHYSICS LETTERS,
1989, 55 (07)
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CUNNINGHAM, BT
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

GUIDO, LJ
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

BAKER, JE
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

MAJOR, JS
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

HOLONYAK, N
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

STILLMAN, GE
论文数: 0 引用数: 0
h-index: 0
机构: UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801
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ZINC DOPING OF MOCVD GAAS
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GLEW, RW
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GLEW, RW
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[4]
VERY HIGH-CARBON INCORPORATION IN METALORGANIC VAPOR-PHASE EPITAXY OF HEAVILY DOPED P-TYPE GAAS
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HANNA, MC
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LU, ZH
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MAJERFELD, A
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APPLIED PHYSICS LETTERS,
1991, 58 (02)
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HANNA, MC
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV COLORADO,CTR OPTOELECTR COMP SYST,BOULDER,CO 80309 UNIV COLORADO,CTR OPTOELECTR COMP SYST,BOULDER,CO 80309

LU, ZH
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV COLORADO,CTR OPTOELECTR COMP SYST,BOULDER,CO 80309 UNIV COLORADO,CTR OPTOELECTR COMP SYST,BOULDER,CO 80309

MAJERFELD, A
论文数: 0 引用数: 0
h-index: 0
机构:
UNIV COLORADO,CTR OPTOELECTR COMP SYST,BOULDER,CO 80309 UNIV COLORADO,CTR OPTOELECTR COMP SYST,BOULDER,CO 80309
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SIMPLE EMPIRICAL RELATIONSHIP BETWEEN MOBILITY AND CARRIER CONCENTRATION
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HILSUM, C
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ELECTRONICS LETTERS,
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HILSUM, C
论文数: 0 引用数: 0
h-index: 0
机构:
ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND ROY RADAR ESTAB,ST ANDREWS RD,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
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CARBON DOPING OF MBE GAAS AND GA0.7AL0.3AS FILMS USING A GRAPHITE FILAMENT
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HOKE, WE
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LEMONIAS, PJ
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LYMAN, PS
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HENDRIKS, HT
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WEIR, D
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COLOMBO, P
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JOURNAL OF CRYSTAL GROWTH,
1991, 111 (1-4)
:269-273

HOKE, WE
论文数: 0 引用数: 0
h-index: 0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101 CHORUS CORP,EPI DIV,ST PAUL,MN 55101

LEMONIAS, PJ
论文数: 0 引用数: 0
h-index: 0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101 CHORUS CORP,EPI DIV,ST PAUL,MN 55101

LYMAN, PS
论文数: 0 引用数: 0
h-index: 0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101 CHORUS CORP,EPI DIV,ST PAUL,MN 55101

HENDRIKS, HT
论文数: 0 引用数: 0
h-index: 0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101 CHORUS CORP,EPI DIV,ST PAUL,MN 55101

WEIR, D
论文数: 0 引用数: 0
h-index: 0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101 CHORUS CORP,EPI DIV,ST PAUL,MN 55101

COLOMBO, P
论文数: 0 引用数: 0
h-index: 0
机构:
CHORUS CORP,EPI DIV,ST PAUL,MN 55101 CHORUS CORP,EPI DIV,ST PAUL,MN 55101
[7]
CHARACTERISTICS OF HEAVILY CARBON-DOPED GAAS BY LPMOCVD AND CRITICAL LAYER THICKNESS
[J].
KIM, SI
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EOM, KS
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KIM, Y
;
KIM, MS
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MIN, SK
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LEE, C
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KWAK, MH
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MA, DS
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JOURNAL OF CRYSTAL GROWTH,
1993, 126 (2-3)
:441-446

KIM, SI
论文数: 0 引用数: 0
h-index: 0
机构: KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

EOM, KS
论文数: 0 引用数: 0
h-index: 0
机构: KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

KIM, Y
论文数: 0 引用数: 0
h-index: 0
机构: KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

KIM, MS
论文数: 0 引用数: 0
h-index: 0
机构: KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

MIN, SK
论文数: 0 引用数: 0
h-index: 0
机构: KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

LEE, C
论文数: 0 引用数: 0
h-index: 0
机构: KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

KWAK, MH
论文数: 0 引用数: 0
h-index: 0
机构: KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA

MA, DS
论文数: 0 引用数: 0
h-index: 0
机构: KOREA ADV INST SCI & TECHNOL,DEPT PHYS,TAEJON 305701,SOUTH KOREA
[8]
METALLIC P-TYPE GAAS AND GAALAS GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY
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KONAGAI, M
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YAMADA, T
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SAITO, K
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TOKUMITSU, E
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TAKAHASHI, K
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JOURNAL OF CRYSTAL GROWTH,
1989, 98 (1-2)
:167-173

KONAGAI, M
论文数: 0 引用数: 0
h-index: 0

YAMADA, T
论文数: 0 引用数: 0
h-index: 0

AKATSUKA, T
论文数: 0 引用数: 0
h-index: 0

SAITO, K
论文数: 0 引用数: 0
h-index: 0

TOKUMITSU, E
论文数: 0 引用数: 0
h-index: 0

TAKAHASHI, K
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[9]
MECHANISM OF CARBON INCORPORATION IN MOCVD GAAS
[J].
KUECH, TF
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VEUHOFF, E
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JOURNAL OF CRYSTAL GROWTH,
1984, 68 (01)
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KUECH, TF
论文数: 0 引用数: 0
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VEUHOFF, E
论文数: 0 引用数: 0
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[10]
HEAVY CARBON DOPING IN METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS USING A LOW V/III-RATIO
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KUSHIBE, M
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OHBA, Y
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KUSHIBE, M
论文数: 0 引用数: 0
h-index: 0
机构: Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho

EGUCHI, K
论文数: 0 引用数: 0
h-index: 0
机构: Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho

FUNAMIZU, M
论文数: 0 引用数: 0
h-index: 0
机构: Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho

OHBA, Y
论文数: 0 引用数: 0
h-index: 0
机构: Research and Development Center, Toshiba Corporation, Saiwai-ku, Kawasaki 210, 1, Komukai Toshiba-cho