DEPENDENCE OF TRAPPING AND SEGREGATION OF INDIUM IN SILICON ON THE VELOCITY OF THE LIQUID-SOLID INTERFACE

被引：53
作者：
BAERI, P
POATE, JM
CAMPISANO, SU
FOTI, G
RIMINI, E
CULLIS, AG
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
[2] ROYAL SIGNALS & RADAR ESTAB,GREAT MALVERN WR14 3PS,WORCESTERSHIRE,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1980年 / 37卷 / 10期
关键词：
D O I：
10.1063/1.91856
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：912 / 914
页数：3
相关论文
共 11 条
[1]   MELTING MODEL FOR PULSING-LASER ANNEALING OF IMPLANTED SEMICONDUCTORS [J].
BAERI, P ;
CAMPISANO, SU ;
FOTI, G ;
RIMINI, E .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (02) :788-797
[2]  
BAERI P, 1980, LASER ELECTRON BEAM, P104
[3]  
Bloembergen N., 1979, LASER SOLID INTERACT, P1, DOI DOI 10.1063/1.31659
[4]   SURFACE ACCUMULATION OF TE ATOMS IN LASER MELTED TE-IMPLANTED SILICON [J].
CAMPISANO, SU ;
BAERI, P ;
GRIMALDI, MG ;
FOTI, G ;
RIMINI, E .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (07) :3968-3970
[5]  
Chalmers B., 1964, PRINCIPLES SOLIDIFIC
[6]   SEGREGATION AND INCREASED DOPANT SOLUBILITY IN PT-IMPLANTED AND LASER-ANNEALED SI LAYERS [J].
CULLIS, AG ;
WEBBER, HC ;
POATE, JM ;
SIMONS, AL .
APPLIED PHYSICS LETTERS, 1980, 36 (04) :320-322
[7]  
FERRIS SD, 1979, LASER SOLID INTERACT
[8]  
Jackson K. A., 1980, LASER ELECTRON BEAM, P104
[9]  
TURNBULL D, 1979, P WORKSHOP LASER IND
[10]   SUPERSATURATED SUBSTITUTIONAL ALLOYS FORMED BY ION-IMPLANTATION AND PULSED LASER ANNEALING OF GROUP-III AND GROUP-V DOPANTS IN SILICON [J].
WHITE, CW ;
WILSON, SR ;
APPLETON, BR ;
YOUNG, FW .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) :738-749
12