TEST-RESULTS ON DOUBLE SIDED READOUT SILICON STRIP DETECTORS

被引：6
|
作者：
BATIGNANI, G
BOSISIO, L
CONTI, A
FOCARDI, E
FORTI, F
GIORGI, MA
GRANDI, M
PARRINI, G
TEMPESTA, P
TONELLI, G
TRIGGIANI, G
机构：
[1] IST NAZL FIS NUCL,BARI,ITALY
[2] SCUOLA NORMALE SUPER,I-56100 PISA,ITALY
[3] UNIV PISA,I-56100 PISA,ITALY
[4] UNIV NAPLES,I-80138 NAPLES,ITALY
[5] UNIV FIRENZE,FIRENZE,ITALY
来源：
IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1989年 / 36卷 / 01期
关键词：
D O I：
10.1109/23.34398
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：40 / 45
页数：6
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