NANOSTRUCTURE TECHNOLOGY

被引：57
作者：
CHANG, THP [1 ]
KERN, DP [1 ]
KRATSCHMER, E [1 ]
LEE, KY [1 ]
LUHN, HE [1 ]
MCCORD, MA [1 ]
RISHTON, SA [1 ]
VLADIMIRSKY, Y [1 ]
机构：
[1] IBM CORP,DIV GEN TECHNOL,HOPEWELL JUNCTION,NY 12533
来源：
IBM JOURNAL OF RESEARCH AND DEVELOPMENT | 1988年 / 32卷 / 04期
关键词：
ELECTRON BEAMS - LITHOGRAPHY;
D O I：
10.1147/rd.324.0462
中图分类号：
TP3 [计算技术、计算机技术];
学科分类号：
0812 ;
摘要：
The ability to fabricate structures with lateral dimensions in the sub-100-nm range has opened a new field of research. This paper reviews recent advances in nanolithography techniques, with a discussion of their relative merits and fundamental limits. Emphasis is given to the scanning electron-beam method, which is claimed to be the most widely used nanolithography method at the present. The two main areas of nanostructure research are device technology and basic science. Highlights of a number of exploratory programs in these two areas are presented.
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收藏
页码：462 / 493
页数：32
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